STABILITY OF TASIX-GAAS SCHOTTKY BARRIERS IN RAPID THERMAL-PROCESSING

被引：11

作者：

HAYNES, TE

CHU, WK

HAN, CC

LAU, SS

PICRAUX, ST

机构：

[1] UNIV CALIF SAN DIEGO, LA JOLLA, CA 92093 USA

[2] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA

[3] UNIV N CAROLINA, CHAPEL HILL, NC 27599 USA

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 22期

关键词：

D O I：

10.1063/1.100506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2200 / 2202

页数：3

共 9 条

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[2] DIRECT MEASUREMENT OF EVAPORATION DURING RAPID THERMAL-PROCESSING OF CAPPED GAAS [J].

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CHU, WK ;

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[3] INITIAL EVAPORATION RATES FROM GAAS DURING RAPID THERMAL-PROCESSING [J].

HAYNES, TE ;

CHU, WK ;

ASELAGE, TL ;

PICRAUX, ST .

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[4] THERMAL AND CHEMICAL-STABILITY OF SCHOTTKY METALLIZATION ON GAAS [J].

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[6] THERMAL-STABILITY OF WSIX/GAAS INTERFACE [J].

TAKATANI, S ;

MATSUOKA, N ;

SHIGETA, J ;

HASHIMOTO, N ;

NAKASHIMA, H .

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[7]

Tseng W. F., 1982, International Electron Devices Meeting. Technical Digest, P174

[8] CHARACTERIZATION OF TANTALUM-SILICON FILMS ON GAAS AT ELEVATED-TEMPERATURES [J].

TSENG, WF ;

ZHANG, B ;

SCOTT, D ;

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CHRISTOU, A ;

WILKINS, BR .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :207-209

[9]

Yokoyama N., 1985, Layered Structures and Interface Kinetics: Their Technology and Applications. US-Japan Seminar on `Solid Phase Epitaxy and Interface Kinetics', P315

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