A MULTIPOINT CORRELATION METHOD WITH BINOMIAL WEIGHTING COEFFICIENTS FOR DEEP-LEVEL MEASUREMENTS IN METAL-OXIDE-SEMICONDUCTOR DEVICES

被引：11

作者：

DMOWSKI, K

机构：

[1] Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-662 Warsaw

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 05期

关键词：

D O I：

10.1063/1.351124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A multipoint correlation method is proposed for an improvement in the selectivity of bulk trap and interface-state measurements in metal-oxide-semiconductor devices from capacitance, voltage, and current transients. It relies on using a multipoint weighting function with binomial weighting coefficients instead of a two-point weighting function originally proposed by Lang [J. Appl. Phys. 45, 3023 (1979)].

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页码：2259 / 2269

页数：11

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