ELECTRICAL AND OPTICAL-PROPERTIES OF TLGASE2 AND TLGASE2-CO SINGLE-CRYSTALS

被引：16

作者：

YOON, CS ^{[1
]}

KIM, BH ^{[1
]}

CHA, DJ ^{[1
]}

KIM, WT ^{[1
]}

机构：

[1] CHONNAM NATL UNIV,DEPT PHYS,KWANGJU 500757,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

EXCITON ABSORPTION; DIELECTRIC CONSTANT; COBALT IMPURITY ABSORPTION; PHASE TRANSITION;

D O I：

10.7567/JJAPS.32S3.555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical absorption and dielectric properties have been investigated for TlGaSe2 and TlGaSe2: Co single crystals grown by Bridgman method. The temperature dependence of the exciton peak position in TlGaSe2 showed the anomalies at 50 K, 90 K, 107 K and 120 K. The dielectric anomalies of TlGaSe2 are found which exhibit structural phase transitions (PT) at T2 = 107 K and T1 = 120 K corresponding to first-order and second-order PT, respectively. It is found that an increase in concentration of Co impurity leads to shift of two phase transition points (T1 and T2) towards the lower temperature and changes the dielectric properties for TlGaSe2: Co. The impurity absorption bands observed in TlGaSe2: Co are attributed to the electronic transitions between the split energy levels of Co2+ ions with tetrahedral (T(d)) symmetry in TlGaSe2 host lattice.

引用

页码：555 / 557

页数：3

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