THE DUAL-GATE BASE RESISTANCE CONTROLLED THYRISTOR

被引：9

作者：

BALIGA, BJ

KURLAGUNDA, R

机构：

[1] Power Semiconductor Research Center. North Carolina State University

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 06期

关键词：

D O I：

10.1109/55.790715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new device concept, called the dual gate base resistance controlled thyristor (DG-BRT), is introduced for simultaneously obtaining the low on-state voltage drop of a thyristor together with a good forward biased safe operating area. The two gates are used to control an N-channel and a P-channel MOSFET integrated with a thyristor structure using the DMOS process. When a positive bias is applied to both gates, the device operates in the thyristor-mode dth a low on-state voltage drop at even high current densities, When a negative bias is applied to the OFF-gate, the device operates in the IGBT-mode, with the saturated current controlled by the positive bias applied to the ON-gate, The results of two-dimensional numerical simulations and measurements performed on devices with 600 V forward blocking capability are reported.

引用

页码：223 / 225

页数：3

共 12 条

[1] Baliga B.J., Adler M.S., Gray P.V., Love R., Zommer N., The insulated gate transistor, IEEE Int. Electron Devices Meeting Dig., pp. 264-267, (1982)
[2] Russel J.P., Goodman A.M., Goodman L.A., Nielson J.M., The COMFET, IEEE Electron Device Lett., 4, pp. 63-65, (1983)
[3] Yamada Y., Majumdar G., Mori S., Hagino H., Kondoh H., Next generation power module, IEEE Int. Symp. Power Semiconductor Devices and IC's, pp. 3-8, (1994)
[4] Shigekane H., Kirihara H., Uchida Y., Developments in modern high power semiconductor devices, IEEE Int. Symp. Power Semiconductor Devices and IC's, pp. 16-21, (1993)
[5] Baliga B.J., Modern Power Devices, (1987)
[6] Temple V.A.K., Tantrapom W., Effect of temperature and load on MCT turn-off capability, IEEE Int. Electron Devices Meeting Dig., pp. 118-121, (1984)
[7] Bauer F., Stockmeier T., Lendenmann H., Dettmer H., Fichtner W., Static and dynamic characteristics of high voltage (3 kV) IGBT and MCT devices, IEEE Int. Symp. Power Semiconductor Devices and IC's, pp. 22-27, (1992)
[8] Nandakumar M., Shekar M.S., Baliga B.J., Fast switching power MOS-gated (EST and BRT) thyristors, IEEE Int. Symp. Power Semiconductor Devices and IC's, pp. 256-260, (1992)
[9] Iwamuro N., Shekar M.S., Baligat B.J., A study of EST's short-circuit SOA, IEEE Int. Symp. Power Semiconductor Devices and IC's, pp. 71-76, (1993)
[10] Seki Y., Iwamuro N., Dual gate MOS thyristor (DGMOT), IEEE Int. Symp. Power Semiconductor Devices and IC's, pp. 159-164, (1993)

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