MONTE-CARLO SIMULATION OF CHARGE TRANSPORT IN SEMICONDUCTOR-DEVICES

被引：7

作者：

LUGLI, P

机构：

[1] Dipartimento di Ingegneria Elettronica, Universita' di Roma Tor Vergata, 00133 Roma, Via della Ricerca Scientifica

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90437-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent applications of Monte Carlo device simulation are reviewed, focussing mainly on GaAs structures. The results show the great versatility of the method, and its potential as an extremely powerful tool for device modeling.

引用

页码：275 / 282

页数：8

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