STRUCTURAL ORDER IN THIN A-SI-H FILMS

被引：5

作者：

BERNTSEN, AJM ^{[1
]}

VANSARK, WGJHM ^{[1
]}

VANDERWEG, WF ^{[1
]}

机构：

[1] UNIV UTRECHT,DEBYE INST,DEPT ATOM & INTERFACE PHYS,3508 TA UTRECHT,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 03期

关键词：

D O I：

10.1063/1.360168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon (a-Si:H) films were grown in an rf-plasma deposition system on various substrates. The thickness of the films ranged from 11 to 579 nm. The structural properties of the films were studied by means of ex situ Raman spectroscopy. The width of the transverse-optic peak in the Raman spectrum was used as a measure for the amount of bond-angle variation in the films. in contrast to earlier reports, it is found that bond-angle variation in glow-discharge-deposited a-Si:H does not depend on the film thickness, nor on the type of substrate material. (C) 1995 American Institute of Physics.

引用

页码：1964 / 1967

页数：4