RESONANT TUNNELING VIA BOUND-STATES IN T-SHAPED ELECTRON WAVE-GUIDE STRUCTURES

The conductance at T = O K of a lateral T-shaped electron waveguide structure (single stub structure) is calculated assuming that electrons are injected into the structure from a 2D-reservoir reservoir and emitted into a second one. In addition to ballistic transport within subbands there is the possibility of resonant tunneling via a single bound state, which resides where channels meet. For sufficiently long channels the conductance peak associated with such tunneling takes the value 2e2/h. © 1990.