OBSERVATION OF TURN-ON ACTION IN A GATE-TRIGGERED THYRISTOR USING A NEW MICROWAVE TECHNIQUE

被引：4

作者：

TERASAWA, Y ^{[1
]}

机构：

[1] HATACHI LTD,HITACHI RES LAB,IBARAKI,JAPAN

来源：

关键词：

D O I：

10.1109/T-ED.1973.17733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：714 / 721

页数：8

共 20 条

MAPHAM, N .

IEEE TRANSACTIONS ON COMMUNICATION AND ELECTRONICS, 1964, 83 (74) :515-&

[12]

MAPHAM N, 1962, ELECTRONICS, V35, P50

[13] FORWARD CHARACTERISTICS OF THYRISTORS [J].

OTSUKA, M .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1400-&

[14]

RUHL HJ, 1970, IEEE T ELECTRON DEVI, VED17, P672

[15] BEHAVIOR OF THYRISTORS UNDER TRANSIENT CONDITIONS [J].

SOMOS, I ;

PICCONE, DE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1306-&

[16]

SOMOS I, 1965, NOV IEEE C REC IND S, P149

[17]

SOMOS I, 1970, IEEE DEVICE, VED17, P680

[18]

TERASAWA Y, 1972, 3 P C SOL STAT DEV, V41, P168

[19]

TERASAWA Y, 1970, 1970 IEEE INT EL DEV

YANG, ES ;

VOULGARIS, NC .