DAMAGE CAUSED BY STORED CHARGE DURING ECR PLASMA-ETCHING

被引：32

作者：

SAMUKAWA, S ^{[1
]}

机构：

[1] NEC CORP LTD,DIV CONSUMER LSI,SAGAMIHARA,KANAGAWA 229,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 05期

关键词：

Damage; ECR plasma; Ion current density; Self-bias voltage; Stored charge;

D O I：

10.1143/JJAP.29.980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of stored charge caused by changing the plasma parameter can be accurately shown by measuring the leakage current in CMOS-inverter integrated circuits. The leakage current increase is due to nonuniform ion current density distribution and self-bias voltage at the point of ECR plasma discharge turn-off. Positive charge ions are stored by the ion current density difference on a wafer. Moreover, a large voltage across the gate oxide is generated by the self-bias voltage at the point of ECR plasma discharge turn-off, and finally degrades the gate oxide. © 1990 The Japan Society of Applied Physics.

引用

页码：980 / 985

页数：6