USE OF VOC-JS']JSC MEASUREMENTS FOR DETERMINATION OF BARRIER HEIGHT UNDER ILLUMINATION AND FOR FILL-FACTOR CALCULATIONS IN SCHOTTKY-BARRIER SOLAR-CELLS

被引:12
作者
PANAYOTATOS, P [1 ]
CARD, HC [1 ]
机构
[1] UNIV MANITOBA,DEPT ELECT ENGN,WINNIPEG R3T 2N2,MANITOBA,CANADA
来源
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 06期
关键词
D O I
10.1049/ip-i-1.1980.0060
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:308 / 311
页数:4
相关论文
共 14 条
[1]   SCHOTTKY SOLAR-CELLS ON THIN EPITAXIAL SILICON [J].
ANDERSON, WA ;
VERNON, SM ;
MATHE, P ;
LALEVIC, B .
SOLID-STATE ELECTRONICS, 1976, 19 (12) :973-974
[2]   SCHOTTKY-BARRIER DIODES FOR SOLAR ENERGY-CONVERSION [J].
ANDERSON, WA ;
DELAHOY, AE .
PROCEEDINGS OF THE IEEE, 1972, 60 (11) :1457-1458
[3]   MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS [J].
CARD, HC ;
YANG, ES .
APPLIED PHYSICS LETTERS, 1976, 29 (01) :51-53
[4]   GENERAL SOLAR-CELL CURVE FACTORS INCLUDING EFFECTS OF IDEALITY FACTOR, TEMPERATURE AND SERIES RESISTANCE [J].
GREEN, MA .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :265-266
[5]   APPLICATION OF THE SUPERPOSITION PRINCIPLE TO SOLAR-CELL ANALYSIS [J].
LINDHOLM, FA ;
FOSSUM, JG ;
BURGESS, EL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) :165-171
[6]  
McQuat R. F., 1976, J APPL PHYS, V47, P2113
[7]  
Panayotatos P., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P634
[8]   EFFECTS OF ILLUMINATION ON DEPLETION-REGION RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER SOLAR-CELLS [J].
PANAYOTATOS, P ;
CARD, HC ;
YANG, ES .
PROCEEDINGS OF THE IEEE, 1977, 65 (08) :1213-1213
[9]   RECOMBINATION IN THE SPACE-CHARGE REGION OF SCHOTTKY-BARRIER SOLAR-CELLS [J].
PANAYOTATOS, P ;
CARD, HC .
SOLID-STATE ELECTRONICS, 1980, 23 (01) :41-47
[10]   SCHOTTKY-BARRIER SOLAR-CELL CALCULATIONS [J].
PULFREY, DL ;
MCOUAT, RF .
APPLIED PHYSICS LETTERS, 1974, 24 (04) :167-169