NEGATIVE DENSITY OF STATES OF A 2DEG IN THE ULTRAQUANTUM LIMIT

被引:5
作者
DOROZHKIN, SI [1 ]
HAUG, RJ [1 ]
VONKLITZING, K [1 ]
PLOOG, K [1 ]
机构
[1] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA
来源
PHYSICA B | 1993年 / 184卷 / 1-4期
关键词
D O I
10.1016/0921-4526(93)90372-D
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report observation of a negative thermodynamic density of states for two-dimensional electrons in GaAs/AlGaAs heterojunctions in the ultraquantum limit. The effect is most pronounced in the vicinity of filling factor v = 1 and v < 1/3. We simultaneously observe a metal-insulator transition which is found to occur at the same filling factor, v(c) congruent-to 0.28, in rather wide ranges of magnetic field and sample mobility. The negative thermodynamic density of states at v < 1/3 indicates the importance of the electron-electron interaction for this transition. The transition at zero magnetic field is observed to be sample-dependent.
引用
收藏
页码:314 / 317
页数:4
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