ACHIEVEMENT OF AMORPHOUS-GERMANIUM OXIDE-BASED CAPACITORS BY PVD

被引：3

作者：

CAPERAA, C

SEGDA, B

JACQUET, M

BAUD, G

BESSE, JP

机构：

来源：

JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 04期

关键词：

D O I：

10.1051/jp3:1993163

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes the elaboration of thin amorphous films of germanium dioxide and mixed germanium and lead oxides by RF cathodic sputtering in order to develop low loss capacitors with the highest possible capacity. The composition and the structure of the films are respectively determined by RBS and EXAFS. The best dielectric characteristics in low frequencies are obtained for the GePb1.40O3.40 material.

引用

页码：775 / 791

页数：17

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