LASER-HEATING OF SEMICONDUCTORS - EFFECT OF CARRIER DIFFUSION IN NON-LINEAR DYNAMIC HEAT-TRANSPORT PROCESS

被引：21

作者：

KIM, DM ^{[1
]}

KWONG, DL ^{[1
]}

SHAH, RR ^{[1
]}

CROSTHWAIT, DL ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,SEMICOND RES & DEV LAB,DALLAS,TX 75222

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.329440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4995 / 5006

页数：12

共 27 条

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[2] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J].

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TOULEMONDE, M ;

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APPLIED PHYSICS, 1979, 19 (03) :313-319

[3]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI

[4]

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[5]

Crank J., 1975, MATH THEORY DIFFUSIO

[6]

FERRIS SD, 1979, LASER SOLID INTERACT, V50

[7] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

GLASSBRENNER, CJ ;

SLACK, GA .

PHYSICAL REVIEW, 1964, 134 (4A) :1058-+

[8]

GLAZOV VM, 1969, LIQUID SEMICONDUCTOR, pCH3

[9]

GODFREY DJ, 1980, 158TH M EL SOC HOLL

[10] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J].

LAX, M .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :786-788

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