MR CI CALCULATIONS OF THE LOW-LYING EXCITED-STATES OF SILANONE (H2SI=O)

被引：30

作者：

KUDO, T ^{[1
]}

NAGASE, S ^{[1
]}

机构：

[1] YOKOHAMA NATL UNIV, FAC EDUC, DEPT CHEM, YOKOHAMA, KANAGAWA 240, JAPAN

来源：

CHEMICAL PHYSICS LETTERS | 1986年 / 128卷 / 5-6期

关键词：

D O I：

10.1016/0009-2614(86)80663-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：507 / 511

页数：5

相关论文

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[9] OXIDATION PROCESSES IN THE GAS-PHASE SILANE-OZONE SYSTEM - CHEMI-LUMINESCENT EMISSION AND THE MOLECULAR-STRUCTURE OF H2SIO
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