IONIC ELECTRODEPOSITION OF II-VI AND III-V COMPOUNDS .3. COMPUTER-SIMULATION OF QUASI-REST POTENTIALS FOR M1X1 COMPOUNDS ANALOGOUS TO CDTE

The quasi-rest potential (QRP) has been proposed as a key quantity in characterizing compound semiconductor (e. g. CdTe) electrodeposition. This article expands the modeling/simulation representation of CdTe in chemical equilibrium, to calculate two 'QRP's': (i) E//m//1, the mixed potential occurring immediately after current interruption and before any relaxation in double layer ion concentration and significant ion exchange/surface stoichiometry change occur, and (ii) E//m//2, another mixed potential occurring after the double layer ion concentrations have relaxed to their bulk values but still before any significant surface composition change occurs. Significant predictions are discussed.