SCANNING TUNNELING MICROSCOPY INVESTIGATION OF 2H-MOS2 - A LAYERED SEMICONDUCTING TRANSITION-METAL DICHALCOGENIDE

被引：11

作者：

WEIMER, M ^{[1
]}

KRAMAR, J ^{[1
]}

BAI, C ^{[1
]}

BALDESCHWIELER, JD ^{[1
]}

KAISER, WJ ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.575408

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：336 / 337

页数：2

共 7 条

[1]

BINNIG G, 1986, IBM J RES DEV, V30, P355

[2] ELECTRONIC-STRUCTURE OF MOSE2, MOS2, AND WSE2 .1. BAND-STRUCTURE CALCULATIONS AND PHOTOELECTRON-SPECTROSCOPY [J].

COEHOORN, R ;

HAAS, C ;

DIJKSTRA, J ;

FLIPSE, CJF ;

DEGROOT, RA ;

WOLD, A .

PHYSICAL REVIEW B, 1987, 35 (12) :6195-6202

[3]

DONI E, 1986, ELECTRONIC STRUCTURE, P72

[4] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].

FEENSTRA, RM ;

STROSCIO, JA ;

TERSOFF, J ;

FEIN, AP .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195

[5] THEORY OF THE SCANNING TUNNELING MICROSCOPE [J].

TERSOFF, J ;

HAMANN, DR .

PHYSICAL REVIEW B, 1985, 31 (02) :805-813

[6] THEORY AND APPLICATION FOR THE SCANNING TUNNELING MICROSCOPE [J].

TERSOFF, J ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1983, 50 (25) :1998-2001

[7]

WEIMER M, UNPUB PHYS REV B

← 1 →