LOW-FIELD HALL COEFFICIENT OF INDIUM

被引:19
作者
GARLAND, JC
机构
[1] Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca
来源
PHYSICAL REVIEW | 1969年 / 185卷 / 03期
关键词
D O I
10.1103/PhysRev.185.1009
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This paper reports measurements of the magnetic field and temperature dependence of the Hall coefficient of both single-crystal and polycrystalline indium in the regime characterized by ωcτ<1. Measurements were performed at temperatures below 4.5°K using the helicon-wave technique. The normally positive Hall coefficient was observed to reverse sign at fields below a few hundred gauss with the field H oriented along the [100] and [111] crystal axes. The magnitude of the crossing field" H0 as well as the zero-field coefficient R(0) was observed to decrease with increasing temperature. We have analyzed our results in terms of a two-band model of the Hall coefficient and have concluded that the ratio of the electron relaxation time to the hole relaxation time is less than unity and decreases with increasing temperature. © 1969 The American Physical Society."
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页码:1009 / &
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