ANALYSIS AND DESIGN OF LOW-DIMENSIONAL STRUCTURES AND DEVICES USING STRAIN .2. STRAINED LAYER SYSTEMS

被引：6

作者：

DUNSTAN, DJ

ADAMS, AR

机构：

[1] Dept. of Phys., Surrey Univ., Guildford

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 12期

关键词：

Semiconductor Devices;

D O I：

10.1088/0268-1242/5/12/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large biaxial strains may be imposed on thin layers by epitaxial growth on a mismatched substrate. Such strained layers offer advantages in semiconductor devices as well as interesting new physics. Some recent work on the structural and electronic properties of (InAGa)As strained layers on GaAs is reviewed here, together with some results on the processing of device structures.

引用

页码：1202 / 1208

页数：7

共 39 条

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[10]

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