PRESSURE-DEPENDENCE OF E2 REFLECTIVITY PEAK AND OF DIELECTRIC-CONSTANT IN III-V SEMICONDUCTORS

被引:6
作者
HUBNER, K
SCHULZE, KR
机构
来源
CZECHOSLOVAK JOURNAL OF PHYSICS SECTION B | 1972年 / B 22卷 / 09期
关键词
D O I
10.1007/BF01694862
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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页码:841 / &
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共 19 条
[1]   EFFECT OF ALLOYING AND PRESSURE ON BAND STRUCTURE OF GERMANIUM AND SILICON [J].
BASSANI, F ;
BRUST, D .
PHYSICAL REVIEW, 1963, 131 (04) :1524-&
[2]   FORM FACTORS AND ULTRAVIOLET SPECTRA OF SEMICONDUCTORS AT HIGH PRESSURE [J].
BRUST, D ;
LIU, L .
PHYSICAL REVIEW, 1967, 154 (03) :647-&
[3]   CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].
CAMPHAUSEN, DL ;
CONNELL, GAN ;
PAUL, W .
PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+
[4]   ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J].
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW, 1966, 142 (02) :530-&
[5]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[6]  
GOROFF I, 1963, PHYS REV, V132, P1080
[7]   ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS [J].
HEINE, V ;
JONES, RO .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04) :719-&
[8]  
HERMAN F, 1966, QUANTUM THEORY ATOMS
[9]   BAND STRUCTURE OF SILICON FROM AN ADJUSTED HEINE-ABARENKOV CALCULATION [J].
KANE, EO .
PHYSICAL REVIEW, 1966, 146 (02) :558-+
[10]   ELASTIC PROPERTIES OF DIAMOND-TYPE SEMICONDUCTORS [J].
KEYES, RW .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3371-&