METAL-COMPLEXES FOR PREPARING FERROELECTRIC THIN-FILMS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：17

作者：

NAKAI, T ^{[1
]}

TABUCHI, T ^{[1
]}

SAWADO, Y ^{[1
]}

KOBAYASHI, I ^{[1
]}

SUGIMORI, Y ^{[1
]}

机构：

[1] NIPPON SANSO CORP,DIV TECHNOL,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期

关键词：

METAL BETA-DIKETONATO COMPLEXES; CHELATE; DIPIVALOYLMETHANATO (DPM); MOCVD; TOXICITY; VOLATILITY; FERROELECTRIC THIN FILM;

D O I：

10.1143/JJAP.31.2992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, metal beta-diketonato complexes have been used as a gas source for preparing ferroelectric thin films by metalorganic chemical vapor deposition (MOCVD). Since we have synthesized highly purified metal dipivaloylmethanato (DPM) complexes such as Pb(DPM)2, Sr(DPM)2 and Ba(DPM)2 for ferroelectric thin films, we have investigated several properties of these chelate compounds related to depositing thin films. Their volatility and toxicity have also been investigated. As a result, it has been found that these chelate compounds have low vapor pressure, but present the advantages of easy handling because of the low toxicity and the possibility of forming thin films at lower temperature.

引用

页码：2992 / 2994

页数：3

共 6 条

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[4] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF C-AXIS ORIENTED PZT THIN-FILMS [J].

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[5]

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[6]

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