PREPARATION OF A NOVEL GALLIUM-ARSENIDE SINGLE-SOURCE PRECURSOR HAVING THE EMPIRICAL-FORMULA ASCL3GA2

被引：24

作者：

WELLS, RL

HALLOCK, RB

MCPHAIL, AT

PITT, CG

JOHANSEN, JD

机构：

[1] Department of Chemistry, Paul M. Gross Chemical Laboratory, Duke University, Durham

来源：

关键词：

D O I：

10.1021/cm00015a002

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

[No abstract available]

引用

页码：381 / 382

页数：2

共 7 条

[1] BECKER VG, 1980, Z ANORG ALLG CHEM, V461, P113
[2] DAGANI R, 1990, CHEM ENG NEWS 0611, P21
[3] ORGANOMETALLIC SYNTHESIS OF GAAS CRYSTALLITES EXHIBITING QUANTUM CONFINEMENT
OLSHAVSKY, MA
GOLDSTEIN, AN
ALIVISATOS, AP
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1990, 112 (25) : 9438 - 9439
[4] GAAS CLUSTERS IN THE QUANTUM SIZE REGIME - GROWTH ON HIGH SURFACE-AREA SILICA BY MOLECULAR-BEAM EPITAXY
SANDROFF, CJ
HARBISON, JP
RAMESH, R
ANDREJCO, MJ
HEGDE, MS
HWANG, DM
CHANG, CC
VOGEL, EM
[J]. SCIENCE, 1989, 245 (4916) : 391 - 393
[5] SEMICONDUCTOR CRYSTALLITES - A CLASS OF LARGE MOLECULES
STEIGERWALD, ML
BRUS, LE
[J]. ACCOUNTS OF CHEMICAL RESEARCH, 1990, 23 (06) : 183 - 188
[6] Use of Tris(trimethylsilyl)arsine To Prepare Gallium Arsenide and Indium Arsenide
Wells, Richard L.
Pitt, Colin G.
McPhail, Andrew T.
Purdy, Andrew P.
Shafieezad, Soheila
Hallock, Robert B.
[J]. CHEMISTRY OF MATERIALS, 1989, 1 (01) : 4 - 6
[7] WELLS RL, 1989, MATER RES SOC S P, V131, P45