ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS

被引：83

作者：

BURSTEIN, E

PICUS, G

HENVIS, B

WALLIS, R

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1956年 / 1卷 / 1-2期

关键词：

D O I：

10.1016/0022-3697(56)90012-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：65 / 74

页数：10

共 24 条

[1]

BETHE HA, 1942, MIT4312 RAD LAB REP

[2]

BROOKS H, 1955, ADV ELECTRONICS ELEC, V1, P85

[3] OPTICAL INVESTIGATIONS OF IMPURITY LEVELS IN SILICON [J].

BURSTEIN, E ;

BELL, EE ;

DAVISSON, JW ;

LAX, M .

JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :849-852

[4]

BURSTEIN E, 1955, B AM PHYS SOC, V30, P13

[5]

BURTON J, 1945, PHYSICA, V20, P845

[6] PROPERTIES OF SILICON AND GERMANIUM [J].

CONWELL, EM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1327-1337

[7] AN OPTICAL CELL FOR USE WITH LIQUID HELIUM [J].

DUERIG, WH ;

MADOR, IL .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1952, 23 (08) :421-424

[8] IONIZATION ENERGIES OF GROUP-III AND GROUP-V ELEMENTS IN GERMANIUM [J].

GEBALLE, TH ;

MORIN, FJ .

PHYSICAL REVIEW, 1954, 95 (04) :1085-1086

[9] THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J].

KITTEL, C ;

MITCHELL, AH .

PHYSICAL REVIEW, 1954, 96 (06) :1488-1493

[10] EXCITED DONOR LEVELS IN SILICON [J].

KLEINER, WH .

PHYSICAL REVIEW, 1955, 97 (06) :1722-1723

← 1 2 3 →