REPLICATION OF VERY SMALL PERIODIC GRATINGS WITH PROXIMITY X-RAY-LITHOGRAPHY

被引：14

作者：

CHEN, Y

KUPKA, RK

ROUSSEAUX, F

RAVET, MF

CARCENAC, F

MADOURI, A

LAUNOIS, H

机构：

[1] Laboratoire de Microstructures et de Microélectronique (CNRS), 92225 Bagneux

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)90146-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes our recent results in high resolution synchrotron radiation lithography. Theoretically we show an image analysis based on the absorbed dose distribution in the x-ray resist rather than on the diffraction intensity calculations. Experimental results are presented, demonstrating a successful replication of very small periodic gratings using high resolution SiC/W masks and a high performance commercial x-ray stepper.

引用

页码：239 / 242

页数：4

共 6 条

[1] Viswanathan, Bright, Seeger, Boucleot, Agnello, Warlaumont, Petrillo, Franch, Brunner, Polcari, delle Guardia, Puisto, EIPB, (1993)
[2] Chen, Rousseaux, Haghiri-Gosnet, Decanini, Launois, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 10 B, (1992)
[3] Guo, Leonard, Cerrina, Di Fabrizio, Luciani, Gentilli, Gerold, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 10 B, (1992)
[4] Kupka, Chen, Rousseaux, Haghiri-Gosnet, Launois, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 11 B, (1993)
[5] Hector, Schattenburg, Anderson, Chu, Wong, Smith, EIPB, (1993)
[6] White, Ocola, Cerrina, Valdimirsky, Maldonado, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 9 B, (1991)

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