PLANAR PROTON-IMPLANTED VCSELS AND FIBER-COUPLED 2-D VCSEL ARRAYS

被引：24

作者：

ZEEB, E ^{[1
]}

MOLLER, B ^{[1
]}

REINER, G ^{[1
]}

RIES, M ^{[1
]}

HACKBARTH, T ^{[1
]}

EBELING, KJ ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR ULM,D-89013 ULM,GERMANY

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1995年 / 1卷 / 02期

关键词：

D O I：

10.1109/2944.401249

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Efficient planar proton implanted InGaAs-GaAs MQW vertical-cavity surface-emitting laser diodes (VCSEL's) and 2-D arrays are fabricated using molecular beam epitaxy. and p-type Beryllium doping. Using single-step grading and modulation delta-doping in the p-type AlGaAs-GaAs Bragg reflectors top surface emitting devices with a maximum wall-plug efficiency of 17.6% and a threshold voltage of 1.8 V are demonstrated. Transverse mode behavior is well described in terms of Laguerre-Gaussian functions, Independently addressable 10x10 arrays of 12 mu m diameter VCSEL's exhibit electrical 3-dB modulation bandwidths up to 6 GHz. Light from the array is simultaneously launched into a 10x10 multimode fiber bundle with coupling efficiency above 70% applying a simple butt-coupling technique.

引用

页码：616 / 623

页数：8

共 16 条

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