LIFETIMES OF HIGH-FREQUENCY PHONONS

被引：11

作者：

LAX, M

NARAYANAMURTI, V

HU, P

WEBER, W

机构：

[1] CUNY CITY COLL,DEPT PHYS,NEW YORK,NY 10031

[2] KERNFORSCHUNGSZENTRUM KARLSRUHE,INST ANGEW KERNPHYS 1,D-7500 KARLSRUHE 1,FED REP GER

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC6期

关键词：

D O I：

10.1051/jphyscol:1981649

中图分类号：

学科分类号：

摘要：

引用

页码：161 / 163

页数：3

共 10 条

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[2] LIFETIMES OF HIGH-FREQUENCY PHONONS [J].

BRON, WE .

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[3]

GILAT G, 1966, PHYS REV, V144, P380

[4] OBSERVATION OF VELOCITY BUNCHING OF NEAR-ZONE-EDGE PHONONS IN SEMICONDUCTORS - AN INTENSE, TUNABLE PHONON SOURCE NEAR 10 A [J].

HU, P ;

NARAYANAMURTI, V ;

CHIN, MA .

PHYSICAL REVIEW LETTERS, 1981, 46 (03) :192-195

[5]

KLEMENS PG, 1958, SOLID STATE PHYSICS

[6] SPONTANEOUS PHONON DECAY SELECTION RULE - N-PROCESS AND U-PROCESSES [J].

LAX, M ;

HU, P ;

NARAYANAMURTI, V .

PHYSICAL REVIEW B, 1981, 23 (06) :3095-3097

[7] INELASTIC SCATTERING OF NEUTRONS BY AN ANHARMONIC CRYSTAL AT LOW TEMPERATURES [J].

MARIS, HJ .

PHYSICS LETTERS, 1965, 17 (03) :228-&

[8] ADIABATIC BOND CHARGE MODEL FOR PHONONS IN A3B5 SEMICONDUCTORS [J].

RUSTAGI, KC ;

WEBER, W .

SOLID STATE COMMUNICATIONS, 1976, 18 (06) :673-675

[9] PROPAGATION OF LARGE-WAVE-VECTOR ACOUSTIC PHONONS IN SEMICONDUCTORS [J].

ULBRICH, RG ;

NARAYANAMURTI, V ;

CHIN, MA .

PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1432-1435

[10] ADIABATIC BOND CHARGE MODEL FOR PHONONS IN DIAMOND, SI, GE, AND ALPHA-SN [J].

WEBER, W .

PHYSICAL REVIEW B, 1977, 15 (10) :4789-4803

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