ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SB2TE3 FILMS

被引：15

作者：

PATEL, NG

PATEL, PG

机构：

[1] Department of Electronics, Sardar Patel University, Gujarat, 388 120, Vallabh Vidyanagar

来源：

JOURNAL OF MATERIALS SCIENCE | 1991年 / 26卷 / 09期

关键词：

D O I：

10.1007/BF01130208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-phase polycrystalline stoichiometric films of Sb2Te3 with different thicknesses were prepared on glass substrates by a flash evaporation technique at constant substrate temperature of 423 K. The electrical properties of these films, such as resistivity, Hall mobility, carrier concentration and activation energy, were determined for different film thicknesses. The optical absorption of these films was also studied. The implications are discussed.

引用

收藏

页码：2543 / 2546

页数：4

相关论文

共 19 条

[1] ELECTRICAL AND OPTICAL PROPERTIES OF SOME M2V-BN3VI-B SEMICONDUCTORS [J].

BLACK, J ;

CONWELL, EM ;

SEIGLE, L ;

SPENCER, CW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (03) :240-251

[2]

Clark A. H., 1980, Polycrystalline and amorphous thin films and devices, P135

[3] SOLAR THERMOELECTRIC GENERATION USING BISMUTH TELLURIDE ALLOYS [J].

GOLDSMID, HJ ;

GIUTRONICH, JE ;

KAILA, MM .

SOLAR ENERGY, 1980, 24 (05) :435-440

[4]

Johnson E. J., 1967, SEMICONDUCTORS SEMIM, V3, P153

[5] OPTICAL AND ELECTRICAL INVESTIGATIONS OF THE ANISOTROPY OF SB2TE3 SINGLE-CRYSTALS [J].

LANGHAMMER, HT ;

STORDEUR, M ;

SOBOTTA, H ;

RIEDE, V .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 109 (02) :673-681

[6]

LUCAS NSP, 1961, J APPL PHYS, V36, P5

[7]

NEUGEBAUER CA, 1969, PHYS THIN FILMS, V2, P25

[8] ELECTRICAL-PROPERTIES OF UNDOPED IN2O3 FILMS PREPARED BY REACTIVE EVAPORATION [J].

NOGUCHI, S ;

SAKATA, H .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (06) :1129-1133

[9] OPTIMIZATION OF GROWTH CONDITIONS FOR Sb2Te3 FILMS. [J].

Patel, T.C. ;

Patel, P.G. .

Materials Letters, 1984, 3 (1-2) :46-50

[10] MEASUREMENTS OF SOME ELECTRICAL AND THERMOELECTRICAL PROPERTIES OF ANTIMONY TELLURIDE FILMS [J].

RAJAGOPALAN, NS ;

GHOSH, SK .

PHYSICA, 1963, 29 (03) :234-+