AUGER RECOMBINATION RATES IN COMPRESSIVELY STRAINED INXGA1-XAS/INGAASP/INP (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.73) MULTIQUANTUM WELL LASERS

被引：19

作者：

DAVIS, L

LAM, Y

NICHOLS, D

SINGH, J

BHATTACHARYA, PK

机构：

[1] Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 02期

关键词：

D O I：

10.1109/68.195977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have experimentally determined Auger recombination rates in compressively strained InxGa1-xAs/InGaAsP/InP quantum wells for the first time. The Auger recombination rates were derived from the measured turn-on delay times during large-signal modulation of single mode lasers. The Auger coefficient increases from 5 +/- 1 X 10(-30) to 13 +/- 1 X 10(-30) cm6 s-1 as the indium composition in the quantum well active region, x, increases from 0.53 to 0.73.

引用

页码：120 / 122

页数：3