HIGH-SPEED SILICON-GERMANIUM ELECTRONICS - THE AUTHOR HAS HELPED CREATE ELECTRONIC DEVICES THAT OUTPERFORM TRADITIONAL SILICON TECHNOLOGY YET REMAIN COMPATIBLE WITH STANDARD MANUFACTURING METHODS

被引:49
作者
MEYERSON, BS
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D O I
10.1038/scientificamerican0394-62
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
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页码:62 / 67
页数:6
相关论文
共 3 条
[1]   UHV CVD GROWTH OF SI AND SI-GE ALLOYS - CHEMISTRY, PHYSICS, AND DEVICE APPLICATIONS [J].
MEYERSON, BS .
PROCEEDINGS OF THE IEEE, 1992, 80 (10) :1592-1608
[2]   EVOLUTION OF THE MOS-TRANSISTOR - FROM CONCEPTION TO VLSI [J].
SAH, CT .
PROCEEDINGS OF THE IEEE, 1988, 76 (10) :1280-1326
[3]  
SZE SM, 1981, PHYSICS SEMICONDUCTO