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HIGH-SPEED SILICON-GERMANIUM ELECTRONICS - THE AUTHOR HAS HELPED CREATE ELECTRONIC DEVICES THAT OUTPERFORM TRADITIONAL SILICON TECHNOLOGY YET REMAIN COMPATIBLE WITH STANDARD MANUFACTURING METHODS
被引:49
作者
:
MEYERSON, BS
论文数:
0
引用数:
0
h-index:
0
MEYERSON, BS
机构
:
来源
:
SCIENTIFIC AMERICAN
|
1994年
/ 270卷
/ 03期
关键词
:
D O I
:
10.1038/scientificamerican0394-62
中图分类号
:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号
:
07 ;
0710 ;
09 ;
摘要
:
引用
收藏
页码:62 / 67
页数:6
相关论文
共 3 条
[1]
UHV CVD GROWTH OF SI AND SI-GE ALLOYS - CHEMISTRY, PHYSICS, AND DEVICE APPLICATIONS
[J].
MEYERSON, BS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
MEYERSON, BS
.
PROCEEDINGS OF THE IEEE,
1992,
80
(10)
:1592
-1608
[2]
EVOLUTION OF THE MOS-TRANSISTOR - FROM CONCEPTION TO VLSI
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Florida, Gainesville, FL,, USA
SAH, CT
.
PROCEEDINGS OF THE IEEE,
1988,
76
(10)
:1280
-1326
[3]
SZE SM, 1981, PHYSICS SEMICONDUCTO
←
1
→
共 3 条
[1]
UHV CVD GROWTH OF SI AND SI-GE ALLOYS - CHEMISTRY, PHYSICS, AND DEVICE APPLICATIONS
[J].
MEYERSON, BS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
MEYERSON, BS
.
PROCEEDINGS OF THE IEEE,
1992,
80
(10)
:1592
-1608
[2]
EVOLUTION OF THE MOS-TRANSISTOR - FROM CONCEPTION TO VLSI
[J].
SAH, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Florida, Gainesville, FL,, USA
SAH, CT
.
PROCEEDINGS OF THE IEEE,
1988,
76
(10)
:1280
-1326
[3]
SZE SM, 1981, PHYSICS SEMICONDUCTO
←
1
→