GAAS P-N JUNCTION DIODES FOR WIDE RANGE THERMOMETRY

被引：53

作者：

COHEN, BG

SNOW, WB

TRETOLA, AR

机构：

来源：

关键词：

D O I：

10.1063/1.1718140

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1091 / &

相关论文

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[3] SEMICONDUCTOR DIODES AND TRANSISTORS AS ELECTRICAL THERMOMETERS
MCNAMARA, AG
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (03) : 330 - &
[4] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[5] WHELAN JM, 1959, SEMICONDUCTORS, pCH9