EFFECTS OF PHOTOEXCITED CARRIERS ON DYNAMIC-RESPONSE OF QUANTUM-WELL OPTICAL MODULATORS

被引:1
作者
NOJIMA, S [1 ]
LARSEN, PD [1 ]
LARSEN, AD [1 ]
MITOMI, O [1 ]
WAKITA, K [1 ]
NAGANUMA, M [1 ]
机构
[1] TECH UNIV DENMARK, DK-2800 LYNGBY, DENMARK
关键词
OPTICAL MODULATION; MODULATORS; MODULATION;
D O I
10.1049/el:19910871
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dynamic response of quantum-well optical modulators in the intrinsic domain is discussed on the basis of a proposed simple model, characterised by the following two processes: excitonic response and photoexcited-carrier relaxation. The response is found to be enhanced in a certain region of modulation frequency and optical power density (quasiresonance phenomena). Comparison between the two most promising quantum-well materials (InGaAs/InP and InGaAs/InAlAs) indicates that the former is more liable to be affected by the photoexcited carriers than the latter.
引用
收藏
页码:1387 / 1389
页数:3
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