SEMICONDUCTOR-LASERS WITHOUT POPULATION-INVERSION

被引：185

作者：

IMAMOGLU, A

RAM, RJ

机构：

[1] Department of Electrical and Computer Engineering, University of California- Santa Barbara, Santa Barbara, CA

来源：

OPTICS LETTERS | 1994年 / 19卷 / 21期

关键词：

D O I：

10.1364/OL.19.001744

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We propose a new scheme for lasing without population inversion that utilizes interferences in double-quantum-well intersubband transitions. In contrast to the previous inversionless laser schemes based on atomic systems, the new proposal permits us to use band-gap engineering to choose the subband energies, coupling strengths, and decay rates, as desired, and permits us to create a laser system that does not require population inversion. We present detailed calculations on a specific scheme and discuss possible extensions.

引用

页码：1744 / 1746

页数：3

共 22 条

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