SURFACE MODIFICATION OF MOS2 USING AN STM

被引：158

作者：

HOSOKI, S

HOSAKA, S

HASEGAWA, T

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

关键词：

D O I：

10.1016/0169-4332(92)90489-K

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunneling microscopy is used to modify the surface structure of molybdenum disulfide (MoS2). A natural MoS2 Crystal often has stable point defects. This study shows that surface sulfur atoms are excised by field evaporation and these artificial defects can be used to form characters at room temperature.

引用

收藏

页码：643 / 647

页数：5

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