LOW-TEMPERATURE SPECIFIC-HEAT IN HG0.88ZN0.12TE

被引：2

作者：

BAGOT, D ^{[1
]}

ROLLAND, S ^{[1
]}

TRIBOULET, R ^{[1
]}

GRANGER, R ^{[1
]}

机构：

[1] LAB PHYS SOLIDES BELLEVUE,CNRS,LP 1332,F-92195 MEUDON,FRANCE

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 05期

关键词：

D O I：

10.1088/0268-1242/8/5/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Specific heat measurements have been performed on Hg0.88Zn0.12Te at low temperatures. C(v) experimental results can be described by the interpolation of the C(v)s of the end binaries HgTe and ZnTe. A comparison with results on HgCdTe show that the 0 K Debye temperature of HgZnTe is higher than that of HgCdTe having the same energy gap. Experimental C(v) results can be modelled with a simple phonon density of states in these mixed crystals.

引用

页码：638 / 642

页数：5

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