ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE SPECTRA IN VARIOUS N-TYPE SEMICONDUCTORS IN RELATION WITH ANODIC REACTION INTERMEDIATES

被引：61

作者：

NAKATO, Y

TSUMURA, A

TSUBOMURA, H

机构：

来源：

CHEMICAL PHYSICS LETTERS | 1982年 / 85卷 / 04期

关键词：

D O I：

10.1016/0009-2614(82)83478-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：387 / 390

页数：4

共 14 条

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[7]

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[8] SURFACE INTERMEDIATES OF AN N-TYPE GALLIUM-PHOSPHIDE ELECTRODE AS RELATED WITH THE SHIFTS OF THE SURFACE BAND ENERGY INDUCED BY OXIDANTS IN SOLUTION [J].

NAKATO, Y ;

TSUMURA, A ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1300-1304

[9] THE CONCEPT OF SURFACE-TRAPPED HOLE IN N-TYPE SEMICONDUCTORS AND THE CONDITIONS FOR EFFICIENT AND STABLE PHOTOELECTROCHEMICAL CELLS [J].

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[10] PHOTOANODIC DISSOLUTION REACTION OF AN N-TYPE GALLIUM-PHOSPHIDE ELECTRODE AND ITS EFFECT ON ENERGIES OF THE ELECTRONIC BANDS AT THE SURFACE [J].

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