共 16 条
- [1] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS [J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1623 - 1632
- [2] PERTURBATIVE APPROACH TO VALENCE CHARGE-DENSITY IN TETRAHEDRALLY BONDED SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (24): : 3612 - 3630
- [3] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
- [4] PSEUDOPOTENTIAL CALCULATION OF SURFACE BAND-STRUCTURE OF SI (111) FACES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (17): : 3020 - 3032
- [6] THEORY OF ELECTRONIC SURFACE-STATES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (09): : 1609 - 1634
- [7] ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04): : 719 - &
- [8] HOLT DB, 1960, J APPL PHYS, V31, P223
- [10] LANNOO M, COMMUNICATION