PIEZOELECTRIC POTENTIALS OF DISLOCATIONS IN INSULATING CRYSTALS

被引：18

作者：

HUTSON, AR

WALKER, LR

机构：

[1] Bell Laboratories, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 10期

关键词：

D O I：

10.1063/1.325760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electric potential produced by the strain field surrounding a dislocation in a piezoelectric crystal was calculated by the exact" plane-strain method. The results are in close agreement with those of the earliest approximate calculation. A major discrepancy between previous calculations has been traced to a sign error in the exact formulation. The most recent approximate calculation is shown to be incorrect in principle."

引用

页码：6247 / 6250

页数：4

共 14 条

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