THE PARA-GERMANIUM TRANSISTOR

被引：10

作者：

PFANN, WG

SCAFF, JH

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1950年 / 38卷 / 10期

关键词：

D O I：

10.1109/JRPROC.1950.233109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1151 / 1154

页数：4

共 12 条

[1] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J].

BARDEEN, J ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1948, 74 (02) :230-231

[2] PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J].

BARDEEN, J ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1949, 75 (08) :1208-1225

[3] PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J].

BARDEEN, J ;

BRATTAIN, WH .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (02) :239-277

[4] EFFECTS OF ELECTRICAL FORMING ON THE RECTIFYING BARRIERS OF N-GERMANIUM AND P-GERMANIUM TRANSISTORS [J].

BARDEEN, J ;

PFANN, WG .

PHYSICAL REVIEW, 1950, 77 (03) :401-402

[5] NON-RECTIFYING GERMANIUM [J].

DUNLAP, WC ;

HENNELLY, EF .

PHYSICAL REVIEW, 1948, 74 (08) :976-976

[6]

PFANN WG, 1950, P IRE, V38, P1222

[7]

PFANN WG, 1949, PHYS REV, V76, P459

[8] SOME CIRCUIT ASPECTS OF THE TRANSISTOR [J].

RYDER, RM ;

KIRCHER, RJ .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :367-400

[9]

SCAFF JH, 1949, J MET, V185, P383

[10]

SCAFF JH, 1945, NDRC14555 NAT DEF RE

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