AMMONIA CHEMISORPTION ON GALLIUM-ARSENIDE CLUSTERS

被引：81

作者：

WANG, LH

CHIBANTE, LPF

TITTEL, FK

CURL, RF

SMALLEY, RE

机构：

[1] RICE UNIV,RICE QUANTUM INST,HOUSTON,TX 77251

[2] RICE UNIV,DEPT PHYS & ELECT ENGN,HOUSTON,TX 77251

来源：

CHEMICAL PHYSICS LETTERS | 1990年 / 172卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0009-2614(90)87123-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Gallium arsenide clusters in the 6-16-atom size range were generated by laser vaporization in a supersonic nozzle and trapped as positive ions in Fourier transform ion-cyclotron resonance mass spectrometer. Measurements of the rate of attachment of ammonia revealed that all clusters larger than seven atoms were most reactive near the 1 1 composition ratio of gallium/arsenic. The results suggest that even at this small size the clusters begin to adopt the alternating gallium-arsenic bonding arrangement characteristic of bulk GaAs crystal surfaces where gallium-arsenic bonding activates gallium atoms for ammonia chemisorption. © 1990.

引用

收藏

页码：335 / 340

页数：6

相关论文

共 12 条

[1]

ALFORD JM, 1989, MATER RES SOC S P, V131, P3

[2] FT-ICR PROBES OF SILICON CLUSTER CHEMISTRY - THE SPECIAL BEHAVIOR OF SI-39+ [J].

ELKIND, JL ;

ALFORD, JM ;

WEISS, FD ;

LAAKSONEN, RT ;

SMALLEY, RE .

JOURNAL OF CHEMICAL PHYSICS, 1987, 87 (04) :2397-2399

[3] FOURIER-TRANSFORM ION-CYCLOTRON RESONANCE STUDIES OF H-2 CHEMISORPTION ON NIOBIUM CLUSTER CATIONS [J].

ELKIND, JL ;

WEISS, FD ;

ALFORD, JM ;

LAAKSONEN, RT ;

SMALLEY, RE .

JOURNAL OF CHEMICAL PHYSICS, 1988, 88 (08) :5215-5224

[4] EFFECT OF SURFACE RECONSTRUCTION ON STABILITY AND REACTIVITY OF SI CLUSTERS [J].

KAXIRAS, E .

PHYSICAL REVIEW LETTERS, 1990, 64 (05) :551-554

[5] PHOTODETACHMENT AND PHOTOFRAGMENTATION STUDIES OF SEMICONDUCTOR CLUSTER ANIONS [J].

LIU, Y ;

ZHANG, QL ;

TITTEL, FK ;

CURL, RF ;

SMALLEY, RE .

JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (12) :7434-7441

[6] TAILORED EXCITATION FOR FOURIER-TRANSFORM ION-CYCLOTRON RESONANCE MASS-SPECTROMETRY [J].

MARSHALL, AG ;

WANG, TCL ;

RICCA, TL .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1985, 107 (26) :7893-7897

[7] SUPERSONIC CLUSTER BEAMS OF III-V SEMICONDUCTORS - GAXASY [J].

OBRIEN, SC ;

LIU, Y ;

ZHANG, Q ;

HEATH, JR ;

TITTEL, FK ;

CURL, RF ;

SMALLEY, RE .

JOURNAL OF CHEMICAL PHYSICS, 1986, 84 (07) :4074-4079

[8] REACTIVE ETCHING OF GAXASY- BY HCL [J].

REENTS, WD .

JOURNAL OF CHEMICAL PHYSICS, 1989, 90 (08) :4258-4264

[9] THE GEOMETRIC STRUCTURES OF THE GAAS(111) AND (110) SURFACES [J].

TONG, SY ;

MEI, WN ;

XU, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :393-398

[10] A STUDY OF THE OMVPE GROWTH MECHANISMS USING INTERNAL REFLECTANCE SPECTROSCOPY TO EXAMINE ADSORPTION OF TMGA AND NH3 AND SURFACE-REACTIONS BETWEEN THEM [J].

TRIPATHI, A ;

MAZZARESE, D ;

CONNER, WC ;

JONES, KA .

JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (01) :45-51