RESIDUAL STRAIN IN EPITAXIALLY GROWN ZNSE/GAAS STUDIED BY 2-PHOTON ABSORPTION-SPECTROSCOPY

被引：19

作者：

MINAMI, F ^{[1
]}

KATO, Y ^{[1
]}

YOSHIDA, K ^{[1
]}

INOUE, K ^{[1
]}

ERA, K ^{[1
]}

机构：

[1] NATL INST RES INORGAN MAT, TSUKUBA, IBARAKI 305, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.105373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We apply two-photon absorption spectroscopy as a novel tool to study residual strain in ZnSe epitaxial layers grown on GaAs substrates. Taking advantage of the polarization selection rules, we find that ZnSe layers thicker than 2-mu-m suffer in-plane tensile strain of the order of 10(-4). Deformation potential for the ZnSe layer is determined directly from two-photon data to high accuracy.

引用

页码：712 / 714

页数：3

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