Valence band resonant photoemission spectroscopy on compounds at Ce 3d-4f and 4d-4f thresholds: surface vs. bulk electronic structure

被引：5

作者：

Chiaia, G. ^{[1
]}

Braicovich, L. ^{[2
]}

Duo, L. ^{[2
]}

Vavassori, P. ^{[2
]}

Olcese, G. L. ^{[3
]}

Qvarford, M. ^{[1
]}

Lindau, I. ^{[1
]}

机构：

[1] Univ Lund, Inst Phys, Dept Synchrotron Radiat Res, Solvegatan 14, S-22362 Lund, Sweden

[2] Politecn Milan, Dip Fis, I-20133 Milan, Italy

[3] Univ Genoa, Ist Chim Fis, I-16132 Genoa, Italy

来源：

PHYSICA B-CONDENSED MATTER | 1995年 / 206卷

关键词：

D O I：

10.1016/0921-4526(94)00371-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron correlation in 4f orbitals strongly influences the low energy properties of Ce and its inter-metallic compounds. By exploiting the different surface sensitivity of valence band resonant photoemission (VBRP) at Ce 3d-4f and Ce 4d-4f thresholds, a lowering of the 4f hybridization has been recently observed on going from the bulk to the surface layers. We report an extensive VBRP work at both the thresholds (3d and 4d) on three Ce compounds (Ce7Rh3, CeRh2, and CeCo2). In addition to surface effects, we found different resonance behaviours for f(0) and f(1) configurations. These differences should not be disregarded when extracting the 4f bulk and surface contributions from the photoemission spectra.

引用

页码：80 / 82

页数：3

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