DRAIN-AVALANCHE AND HOLE-TRAPPING INDUCED GATE LEAKAGE IN THIN-OXIDE MOS DEVICES

被引：38

作者：

CHANG, C

HADDAD, S

SWAMINATHAN, B

LIEN, J

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：588 / 590

页数：3

共 12 条

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