PREPARATION AND PHOTOLUMINESCENCE OF THULIUM-ACTIVATED ZINC-SULFIDE FILMS

被引：14

作者：

COLLINS, BT ^{[1
]}

KANE, J ^{[1
]}

LING, M ^{[1
]}

TUENGE, RT ^{[1
]}

SUN, SS ^{[1
]}

机构：

[1] PLANAR SYST INC,BEAVERTON,OR 97006

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 11期

关键词：

D O I：

10.1149/1.2085444

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin films of thulium-activated ZnS have been deposited on glass, sapphire, and dielectric-coated silicon by thermal evaporation, RF magnetron sputtering, and low pressure chemical vapor deposition. Films have been annealed under different atmospheres (vacuum, N2, and H2S) and a range of temperatures (450-800-degrees-C) to determine the effect on the emission properties. Photoluminescence measurements show that ZnS:Tm, halide films emit almost exclusively in the near-infrared (800 nm), whereas sputtered ZnS:Tm,Li films are intense blue (478 nm) emitters after annealing in H2S at 800-degrees-C.

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页码：3515 / 3518

页数：4

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