ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS

被引：59

作者：

STALL, R ^{[1
]}

WOOD, CEC ^{[1
]}

BOARD, K ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECTR ENGN,SWANSEA SA2 8PP,W GLAMORGAN,WALES

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 24期

关键词：

Gallium arsenide; Ohmic contacts;

D O I：

10.1049/el:19790570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonalloyed ohmic contacts to n-GaAs with contact resistances (ρc) below 1.0 × 10−7 Ω cm2 have been obtained using a Ge/GaAs heterojunction system. Metals are evaporated on heavily arsenic-doped germanium (Ge) layers grown on GaAs. Low values of ρc result from the low Schottky barrier height (≈ 0.50 eV) and the high doping levels obtainable for n-Ge(≈ 1020cm−3). © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：800 / 801

页数：2