PREBREAKDOWN CONDUCTION IN ZNO VARISTORS

被引：11

作者：

CASTRO, MS

NUNEZ, GM

RESASCO, DE

ALDAO, CM

机构：

[1] Institute of Materials Science and Technology (INTEMA), Universidad Nacional de Mar del Plata-CONICET, Mar Del Plata

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1992年 / 75卷 / 04期

关键词：

D O I：

10.1111/j.1151-2916.1992.tb04144.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A model which quantitatively accounts for the important features of prebreakdown conduction in ZnO-based metal oxide varistors is presented. The prebreakdown current dependence with applied voltage and temperature enables us to extract several features for the grain boundary. Estimations have been made for the local electron concentration in polycrystalline ZnO near the grain boundary and for the grain boundary potential barrier height.

引用

页码：800 / 804

页数：5

共 17 条

[1] DYNAMIC-COUPLING MODEL - INTERPRETATION OF TEMPERATURE-DEPENDENT, DOPANT-CONCENTRATION-DEPENDENT, AND COVERAGE-DEPENDENT SCHOTTKY-BARRIER FORMATION [J].

ALDAO, CM ;

VITOMIROV, IM ;

WADDILL, GD ;

ANDERSON, SG ;

WEAVER, JH .

PHYSICAL REVIEW B, 1990, 41 (05) :2800-2812

[2] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].

CROWELL, CR ;

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1969, 12 (02) :89-&

[3] CONDUCTION MECHANISM OF NON-OHMIC ZINC-OXIDE CERAMICS [J].

EDA, K .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2964-2972

[4] METAL-OXIDE VARISTOR ACTION - HOMOJUNCTION BREAKDOWN MECHANISM [J].

EINZINGER, R .

APPLIED SURFACE SCIENCE, 1978, 1 (03) :329-340

[5] METAL-OXIDE VARISTORS [J].

EINZINGER, R .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1987, 17 :299-321

[6] STATISTICS AND GRAIN-SIZE IN ZINC-OXIDE VARISTORS [J].

EMTAGE, PR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6833-6837

[7] CURRENT TRANSPORT IN METAL SEMICONDUCTOR CONTACTS - UNIFIED APPROACH [J].

FONASH, SJ .

SOLID-STATE ELECTRONICS, 1972, 15 (07) :783-&

[8] PREBREAKDOWN IN LOW-VOLTAGE VARISTORS AND ITS RELATION WITH DEEP LEVELS [J].

GAUCHER, P ;

PERRIER, RL ;

GANNE, JP .

REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (08) :823-830

[9] APPLICATION OF ZINC-OXIDE VARISTORS [J].

GUPTA, TK .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (07) :1817-1840

[10] DIELECTRIC BEHAVIOR OF ZNO-BASED CERAMIC SEMICONDUCTORS [J].

KASHYAP, SC ;

CHOPRA, KL ;

BHUSHAN, B .

BULLETIN OF MATERIALS SCIENCE, 1987, 9 (03) :169-180

← 1 2 →