A 16-CHANNEL CMOS NEURAL STIMULATING ARRAY

被引:35
作者
TANGHE, SJ
WISE, KD
机构
[1] Center for Integrated Sensors and Circuits, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbon, MI
基金
美国国家卫生研究院;
关键词
D O I
10.1109/4.173111
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a probe designed for the highly selective long-term stimulation of neuronal assemblies in the central nervous system. The micromachined multishank probe incorporates CMOS circuitry to control the output current on 16 iridium oxide (IrO) electrode sites. Serial site addresses and current amplitude data are loaded into the probe at 4 MHz and converted to analog stimulus currents over a range of +/- 254 muA using 16 on-chip 8-b DAC's. The probe circuitry dissipates only 80 muW from +/- 5-V supplies when not delivering stimulus currents and uses five external leads. It permits the IrO sites to be activated by voltammetry from off-chip, provides per-channel pulse time-outs to prevent accidental overstimulation of the tissue, and signals the external world, using a status bit, in the event of certain trouble conditions. The stimulating site impedances and the stimulus currents can be measured from off chip on demand. The circuitry is implemented in a single-metal, single-poly, CMOS process with 3-mum minimum features using 7100 transistors in an area of 11 mm2.
引用
收藏
页码:1819 / 1825
页数:7
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