Fabrication of sub-10 nm silicon tips: A new approach

Nanometer scale silicon tips are becoming increasingly important for use as field emitters. Applications include high resolution field emission displays acid ultrahigh-speed devices. Of crucial importance is the precise control of tip shape and size if field emitters are to be used as microelectronic elements. This article reports on the fabrication procedure of silicon based gridded field emitter tips, using a new fabrication route which eliminates the need for an oxidation sharpening step. (C) 1995 American Vacuum Society.