SUPPRESSION OF HOT-CARRIER EFFECTS IN SUBMICROMETER CMOS TECHNOLOGY

被引：36

作者：

CHEN, ML

LEUNG, CW

COCHRAN, WT

JUNGLING, W

DZIUBA, C

YANG, TS

机构：

[1] AT&T Bell Lab, Allentown, PA,, USA

来源：

关键词：

D O I：

10.1109/16.8795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2210 / 2220

页数：11

共 34 条

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[3]

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[4]

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[5]

Chapman R. A., 1987, IEDM, P362, DOI [10.1109/IEDM.1987.191432, DOI 10.1109/IEDM.1987.191432]

[6]

Chen M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P256

[7]

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[8]

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[9]

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[10]

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