HOLLOW SCREW DISLOCATION CORES IN SILICON CARBIDE

被引:9
作者
GOLIGHTLY, JP
机构
[1] Norton Research Co. (Canada) Ltd., Chippawa, Ontario
来源
ZEITSCHRIFT FUR KRISTALLOGRAPHIE KRISTALLGEOMETRIE KRISTALLPHYSIK KRISTALLCHEMIE | 1969年 / 130卷 / 4-6期
关键词
D O I
10.1524/zkri.1969.130.1-6.310
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Hollow screw dislocation cores have been observed in boron and nitrogen doped SiC. Their diameter, D, approximately obeys the theoretical relation1: [formula omitted] where μ is the modulus of rigidity, γ is the surface tension and b is the magnitude of the Burgers' vector. The evidence gives a possible range of γ from 20 • 10-13 to 100 • 10~13 erg per molecule, or 28.9 to 144 kcal per mole. The range is greater than the error of measurement and may reflect, among other things, a real dependence of γ on the type of dopant present. © 1969, Walter de Gruyter. All rights reserved.
引用
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页码:310 / +
页数:1
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