ISOLATED INTERSTITIALS IN SILICON

被引：28

作者：

SINGHAL, SP

机构：

来源：

PHYSICAL REVIEW B | 1971年 / 4卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.4.2497

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2497 / &

共 12 条

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