THE ROLE OF HYDROGEN-ATOMS IN AFTERGLOW DEPOSITION OF SILICON THIN-FILMS

被引：9

作者：

MEIKLE, S

NAKANISHI, Y

HATANAKA, Y

机构：

[1] Graduate School of Electronic Science and Technology, Research institute of Electronics, Shizuoka University, Hamamatsu

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期

关键词：

Afterglow; Hydrogen; Microwave plasma; Silicon film; Surface recombination; Titration;

D O I：

10.1143/JJAP.29.L2130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon thin film deposition resulting from addition of SiH4to the afterglow of an H2plasma has been investigated. A simple experiment where a steel insert has been used to quench H atoms in the afterglow indicates that H atoms from the plasma are not required for film growth. it is proposed that the results are most easily interpreted using a model where SiH2is the growth precursor. © 1990 IOP Publishing Ltd.

引用

页码：L2130 / L2132

页数：3

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